Switching performance comparison between conventional SOT and STT-SOT write schemes with effect of shape deformation

We demonstrate the effect of shape deformation in spin–orbit torque magnetoresistive random access memory (SOT-MRAM) based on micromagnetic simulation by generating 1000 randomly deformed samples using exponentially decaying autocorrelation function. The conventional in-plane magnetic field-assisted SOT write scheme and recently proposed spin-transfer torque-spin-orbit (STT-SOT) hybrid were simulated compared with Gilbert damping constant (α) considered presence absence Dzyaloshinskii–Moriya interaction (DMI). found that MTJ can result failure or degradation switching time. To compensate device-to-device performance variation induced deformation, condition high α DMI is desired for scheme. STT-SOT shows slight improvement larger while it retains 100% probability even small regardless DMI.